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1

30-W/mm GaN HEMTs by Field Plate Optimization

Wu, Y.-F., Saxler, A., Moore, M., Smith, R.P., Sheppard, S., Chavarkar, P.M., Wisleder, T., Mishra, U.K., Parikh, P.

Journal:

IEEE Electron Device Letters

Year:

2004

Language:

english

File:

PDF, 181 KB

english, 2004

2

Handbook of Thin Film Devices Volume 1 || Field Effect TransistorsFETs and HEMTs

Year:

2000

Language:

english

File:

PDF, 4.12 MB

english, 2000

3

[IEEE Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Notre Dame, IN, USA (June 21-23, 2004)] Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Linearity performance of GaN HEMTs with field plates

Wu, Y.-F., Saxler, A., Wisleder, T., Moore, M., Smith, R.P., Sheppard, S., Chavarkar, P.M., Parikh, P.

Year:

2004

Language:

english

File:

PDF, 123 KB

english, 2004

4

GaAs MESFET's on a truly insulating buffer layer: demonstration of the GaAs on insulator technology

Parikh, P.A., Chavarkar, P.M., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 69 KB

english, 1997

5

[IEEE 2000 IEEE MTT-S International Microwave Symposium Digest - Boston, MA, USA (11-16 June 2000)] 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) - Bias free optical control of microwave circuits and antennas using improved optically variable capacitors

Nagra, A.S., Jerphagnon, O., Chavarkar, P., VanBlaricum, M., York, R.A.

Year:

2000

Language:

english

File:

PDF, 378 KB

english, 2000

6

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - 3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz

Wu, Y.-F., Moore, M., Saxler, A., Smith, P., Chavarkar, P.M., Parikh, P.

Year:

2003

Language:

english

File:

PDF, 164 KB

english, 2003

7

InP-based devices and their applications for merged FET-HBT technologies

P. Parikh, K. Kiziloglu, M. Mondry, P. Chavarkar, B. Keller, S. Denbaars, U. Mishra

Journal:

Microwave and Optical Technology Letters

Year:

1996

Language:

english

File:

PDF, 636 KB

english, 1996

8

Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

J.C. Yen, Q. Zhang, M.J. Mondry, P.M. Chavarkar, E.L. Hu, S.I. Long, U.K. Mishra

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 537 KB

english, 1996

9

Strain relaxation in InGaAs lattice engineered substrates

P. Chavarkar, S. K. Mathis, L. Zhao, S. Keller, J. S. Speck, U. K. Mishra

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 830 KB

english, 2000

10

Analysis of in-situ etched and regrown AlInAsGaInAs interfaces

P. Chavarkar, D.S.L. Mui, T. Strand, L.A. Coldren, U.K. Mishra

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 444 KB

english, 1997

11

Near Band-Edge Field-Dependent Absorption Coefficient and Refractive Index Determined by Photocurrent and Transmittance Measurements

Xu, Ming G., Dell, John M., Siliquini, John F., Chavarkar, Prashant

Journal:

Year:

1999

Language:

english

File:

PDF, 170 KB

english, 1999

12

Large-scale photonic integrated circuits for long-haul transmission and switching

Nagarajan, Radhakrishnan, Kato, Masaki, Pleumeekers, Jacco, Evans, Peter, Lambert, Damien, Chen, Arnold, Dominic, Vince, Mathur, Atul, Chavarkar, Prashant, Missey, Mark

Journal:

Journal of Optical Networking

Year:

2007

Language:

english

File:

PDF, 1.08 MB

english, 2007

13

Newer perspectives of childhood asthma

Keya Lahiri, Mrunalini Chavarkar

Journal:

Medical Journal Armed Forces India

Year:

2004

Language:

english

File:

PDF, 43 KB

english, 2004

14

[IEEE 1996 54th Annual Device Research Conference Digest - Santa Barbara, CA, USA (24-26 June 1996)] 1996 54th Annual Device Research Conference Digest - First demonstration of GaAs on insulator (GOI) technology

Parikh, P., Chavarkar, P., Mishra, U.

Year:

1996

Language:

english

File:

PDF, 159 KB

english, 1996

15

Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Chavarkar, P., Coffie, R., Zhang, N.Q., Heikinan, S., Shen, L., Xing, H., Zheng, C., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 174 KB

english, 2002

16

[IEEE Device Research Conference. Conference Digest - Notre Dame, IN, USA (25-27 June 2001)] Device Research Conference. Conference Digest (Cat. No.01TH8561) - Linearity of high Al-content AlGaN/GaN HEMTs

Jenkins, T., Kehias, L., Parikh, P., Wu, Y.-F., Chavarkar, P., Moore, M., Mishra, U.

Year:

2001

Language:

english

File:

PDF, 170 KB

english, 2001

17

[Thin Films] Frontiers of Thin Film Technology Volume 28 || Field effect transistors: FETs and HEMTs

Chavarkar, Prashant

Year:

2001

Language:

english

File:

PDF, 4.31 MB

english, 2001

18

Strain relaxation of In[sub x]Ga[sub 1âx]As during lateral oxidation of underlying AlAs layers

Chavarkar, P., Zhao, L., Keller, S., Fisher, A., Zheng, C., Speck, J. S., Mishra, U. K.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 433 KB

english, 1999

19

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - Noise characteristics of field-plated GaN HEMTs

Wu, Y.-F., Moore, M., Wisleder, T., Chavarkar, P.m., Parikh, P.

Year:

2004

Language:

english

File:

PDF, 280 KB

english, 2004

20

[IEEE 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings - San Diego, CA, USA (25-27 Aug. 2003)] 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) - AlGaN-GaN HEMTs: material, device, circuit technology and applications

Parikh, P., Wu, Y.-F., Chavarkar, P., Moore, M., Mishra, U.K., Sheppard, S., Smith, R.P., Saxler, A., Pribble, W., Allen, S., Milligan, J., Palmour, J.

Year:

2004

Language:

english

File:

PDF, 318 KB

english, 2004

21

[IEEE 58th DRC. Device Research Conference - Denver, CO, USA (19-21 June 2000)] 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) - AlGaN-GaN HEMTs and HBTs for microwave power

Mishra, U.K., Ventury, R., McCarthy, L., Smorchkova, Y., Keller, S., Xing, H., Zhang, N., Speck, J.S., York, R., DenBaars, S., Wu, Y.-F., Parikh, P., Chavarkar, P.

Year:

2000

Language:

english

File:

PDF, 135 KB

english, 2000

22

[IEEE IEEE International Symposium on Compound Semiconductors - San Diego, CA, USA (25-27 Aug. 2003)] 2003 International Symposium on Compound Semiconductors - AlGaN-GaN HEMTs: material, device, circuit technology and applications

Parikh, P., Wu, Y.-F., Chavarkar, P., Moore, M., Mishra, U.K., Sheppard, S., Smith, R.P., Saxler, A., Duc, J., Pribble, W., Milligan, J., Palmour, J.

Year:

2003

Language:

english

File:

PDF, 160 KB

english, 2003

23

[IEEE 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Matsue, Japan (2007.05.14-2007.05.18)] 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Large-Scale Photonic Integrated Circuits

Nagarajan, Radhakrishnan, Kato, Masaki, Pleumeekers, Jacco, Evans, Peter, Hurtt, Sheila, Dentai, Andrew, Missey, Mark, Chen, Arnold, Mathur, Atul, Lambert, Damien, Chavarkar, Prashant, Back, Johan, Mu

Year:

2007

Language:

english

File:

PDF, 2.71 MB

english, 2007

24

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - A 50-W AlGaN/GaN HEMT amplifier

Wu, Y.-F., Chavarkar, P.M., Moore, M., Parikh, P., Keller, B.P., Mishra, U.K.

Year:

2000

Language:

english

File:

PDF, 211 KB

english, 2000

25

[IEEE 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (30 Sept.-2 Oct. 2001)] Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) - Progress in gallium nitride-based bipolar transistors

Xing, H., Green, D.S., McCarthy, L., Smorchkova, I.P., Chavarkar, P., Mates, T., Keller, S., DenBaars, S., Speck, J., Mishra, U.K.

Year:

2001

Language:

english

File:

PDF, 666 KB

english, 2001

26

[IEEE 1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings - Puerto de la Cruz, Spain (6-11 Jan. 1997)] 1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings - GaAs on insulator (GOI) for low power applications

Mishra, U.K., Parikh, P., Chavarkar, P., Champlain, J.

Year:

1997

Language:

english

File:

PDF, 465 KB

english, 1997

27

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - High-gain microwave GaN HEMTs with source-terminated field-plates

Wu, Y.-F., Moore, M., Wisleder, T., Chavarkar, P.M., Mishra, U.K., Parikh, P.

Year:

2004

Language:

english

File:

PDF, 132 KB

english, 2004

28

[IEEE 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA (19-21 June 1995)] 1995 53rd Annual Device Research Conference Digest - Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor logic circuits

Yen, J.C., Zhang, Q., Mondry, M.J., Chavarkar, P.M., Hu, E.L., Long, S.I., Mishra, U.K.

Year:

1995

Language:

english

File:

PDF, 225 KB

english, 1995

29

[IEEE International Meeting for Future of Electron Devices, 2004. - Kyoto, Japan (July 26-28, 2004)] International Meeting for Future of Electron Devices, 2004. - GaN HEMTs: material, device, circuit technology and applications

Parikh, P., Wu, Y.-F., Moore, M., Chavarkar, P., Wisleder, T., Mishra, U.K., Sheppard, S., Smith, R.P., Saxler, A., Allen, S., Milligan, J., Palmour, J.

Year:

2004

Language:

english

File:

PDF, 1.71 MB

english, 2004

30

[IEEE Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (1997.08.6-1997.08.6)] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 - Reduction of short channel effects in self-aligned AlInAs/GaInAs HEMTs by lateral bandgap engineering for high f/sub max/

Chavarkar,, Migliore,, Yen,, Fischetti,, Laux,, Mishra,

Year:

1997

Language:

english

File:

PDF, 551 KB

english, 1997

31

Indirect optical control of microwave circuits using monolithic optically variable capacitors

Nafra, A.S., Jerphagnon, O., Chavarkar, P., VanBlaricum, M., York, R.A.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

1999

Language:

english

File:

PDF, 226 KB

english, 1999

32

[IEEE IEEE Lester Eastmann Biennial Conference - Newark, DE, USA (6-8 Aug. 2002)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices - High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs

Parikh, P., Wu, Y., Moore, M., Chavarkar, P., Mishra, U., Neidhard, R., Kehias, L., Jenkins, T.

Year:

2002

Language:

english

File:

PDF, 375 KB

english, 2002

33

[IEEE Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (1997.08.6-1997.08.6)] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 - Monolithic optically variable capacitors for tunable microwave antennas

Nagra,, Chavarkar,, Swann,, Larry,, VanBlaricum,, Mishra,, York,

Year:

1997

Language:

english

File:

PDF, 665 KB

english, 1997

34

A new FET-based integrated circuit technology: the SASSFET

Parikh, P.A., Jiang, W.N., Chavarkar, P.M., Kiziloglu, K., Keller, B., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 374 KB

english, 1996

35

[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Bias-dependent performance of high-power AlGaN/GaN HEMTs

Wu, Y.-F., Chavarkar, P.M., Moore, M., Parikh, P., Mishra, U.K.

Year:

2001

Language:

english

File:

PDF, 238 KB

english, 2001

36

[IEEE OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference - Anaheim, CA, USA (2007.03.25-2007.03.29)] OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference - 40-Channel Transmitter and Receiver Photonic Integrated Circuits Operating at a per Channel Data Rate 12.5Gbit/s

Kato, Masaki, Nagarajan, Radhakrishnan, Pleumeekers, Jacco, Evans, Peter, Chen, Arnold, Mathur, Atul, Dentai, Andrew, Hurtt, Sheila, Lambert, Damien, Chavarkar, Prashant, Missey, Mark, Back, Johan, Mu

Year:

2007

Language:

english

File:

PDF, 1.98 MB

english, 2007

37

[IEEE Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA (11-15 May 1997)] Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - Drain engineering in AlInAs/GaInAs HEMTs for high f/sub τ/ and f/sub max/

Migliore, E., Chavarkar, P., Yen, J., Mishra, U.K., Fischetti, M.V., Laux, S.E.

Year:

1997

Language:

english

File:

PDF, 350 KB

english, 1997

38

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (7-9 Aug. 1995)] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Selectively regrown ohmic contacts for high frequency and low noise FETs

Kiziloglu, K., Keller, B.P., Chavarkar, P.M., DenBaars, S.P., Mishra, U.K.

Year:

1995

Language:

english

File:

PDF, 630 KB

english, 1995

39

Effect of Sb composition on lateral oxidation rates in AlAs[sub 1−x]Sb[sub x]

Chavarkar, P., Mishra, U. K., Mathis, S. K., Speck, J. S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 391 KB

english, 2000

40

Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation

Mathis, S. K., Chavarkar, P., Andrews, A. M., Mishra, U. K., Speck, J. S.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 426 KB

english, 2000

41

[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - First Demonstration of p-HEMTs in the newly developed GaAs On Insulator (GOI) Technology

Parikh, P., Chavarkar, P., Wu, Y.F., Pinsukanjana, P., Mishra, U.K.

Year:

1996

Language:

english

File:

PDF, 837 KB

english, 1996

42

NOISE CHARACTERISTICS OF FIELD-PLATED GAN HEMTS

WU, Y.-F., MOORE, M., WISLEDER, T., CHAVARKAR, P. M., PARIKH, P., SAXLER, A.

Journal:

International Journal of High Speed Electronics and Systems

Year:

2004

Language:

english

File:

PDF, 154 KB

english, 2004

43

40-channel transmitter and receiver photonic integrated circuits operating at per channel data rate 12.5 Gbit/s

Kato, M., Nagarajan, R., Pleumeekers, J., Evans, P., Chen, A., Mathur, A., Dentai, A., Hurtt, S., Lambert, D., Chavarkar, P., Missey, M., Bäck, J., Muthiah, R., Murthy, S., Salvatore, R., Joyner, C.,

Journal:

Electronics Letters

Year:

2007

Language:

english

File:

PDF, 193 KB

english, 2007

44

Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s

Nagarajan, R., Kato, M., Pleumeekers, J., Evans, P., Lambert, D., Chen, A., Dominic, V., Mathur, A., Chavarkar, P., Missey, M., Dentai, A., Hurtt, S., Bäck, J., Muthiah, R., Murthy, S., Salvatore, R.

Journal:

Electronics Letters

Year:

2006

Language:

english

File:

PDF, 525 KB

english, 2006

45

[IEEE Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (1997.08.6-1997.08.6)] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 - Depletion mode Al/sub 2/O/sub 3//GaAs MOSFETs with high current density

Parikh,, Chavarkar,, Keller,, Mishra,

Year:

1997

Language:

english

File:

PDF, 764 KB

english, 1997

46

Strain relaxation of InGaAs by lateral oxidation of AlAs

S. K. Mathis, P. Chavarkar, A. M. Andrews, U. K. Mishra, J. S. Speck

Year:

2000

Language:

english

File:

PDF, 1003 KB

english, 2000

47

[IEEE Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA (11-15 May 1997)] Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - First demonstration of AlInAs/GaInAs HEMTs on AlAsSb and oxidized AlAsSb buffers

Chavarkar, P., Champlain, J., Parikh, P., Mishra, U.K.

Year:

1997

File:

PDF, 280 KB

1997

48

[IEEE Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA (11-15 May 1997)] Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - First demonstration of AlInAs/GaInAs HEMTs on AlAsSb and oxidized AlAsSb buffers

Chavarkar, P., Champlain, J., Parikh, P., Mishra, U.K.

Year:

1997

Language:

english

File:

PDF, 280 KB

english, 1997

49

[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - Oxide based compound semiconductor electronics

Mishra, U.K., Parikh, P., Chavarkar, P., Yen, J., Champlain, J., Thibeault, B., Reese, H., Song Stone Shi,, Hu, E., Lijie Zhu,, Speck, J.

Year:

1997

Language:

english

File:

PDF, 554 KB

english, 1997

50

Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants

Chavarkar, P.M., Zhao, L., Keller, S., Black, K.A., Hu, E., Speck, J., Mishra, U.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 2.93 MB

english, 1998

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